Barker, J. R., and D. K. Ferry. "On the physics and modeling of small semiconductor devices-II: The very small device." Solid-State Electronics 23.6 (1980): 531-544.
http://www.sciencedirect.com/science/article/pii/0038110180900349
Disclosing normal PMMA as used extensively in electronbeam lithographic processing of LSI circuits, can be utilized to differentiate value in the same order as that expected from Josephson junction logic with layers completely depleted with the electrons falling into the GaAs potential wells. Published as three texts.

Sollner, T. C. L. G., et al. "Resonant tunneling through quantum wells at frequencies up to 2.5 THz." Applied Physics Letters 43.6 (1983): 588-590.
http://scitation.aip.org/content/aip/journal/apl/43/6/10.1063/1.94434
Disclosing well influencing low-density transit time estimate by about a factor of 2. The tunneling current density of these devices is rather low for practical applications in view of the large capacitance.

Chang, L. L., Leo Esaki, and R. Tsu. "Resonant tunneling in semiconductor double barriers." Applied Physics Letters 24.12 (1974): 593-595.
http://nashaucheba.ru/docs/6/5419/conv_26/file26.pdf
Disclosing resonant tunneling of electrons in double-barrier structures (fabricated by molecular beam epitaxy which produces extremely smooth films and interfaces) with a thin GaAs sandwiched between two GaAlas barriers as peaks/humps in the tunneling current at voltages near the quasi-stationary states of the potential well.

Wilamowski, Bodgan M. "Schottky diodes with high breakdown voltages." Solid-State Electronics 26.5 (1983): 491-493.
http://www.eng.auburn.edu/~wilambm/pap/1983/SSElektr_SchottkyDiodes.pdf
Discloses increasing the breakdown voltages in silicon Schottky diodes with screen-diffusion regions introduced to a guarding ring to lower the electrical field near the Schottky contact resulting in higher breakdown voltages increased by a factor of 3-5. However, a large device area is required for the same Schottky contact area and, therefore, the junction parasitic capacitance is greater.

Frey, Jeffrey. "Simulation of Submicron Si and GaAs Devices: Problems and Techniques." Simulation of Semiconductor Devices and Processes: Proceedings of an International Conference Held at University College of Swansea, Swansea, UK on July 9th-12th, 1984. Vol. 1. Pine Ridge Press, 1984.
http://in4.iue.tuwien.ac.at/pdfs/sisdep1984/pdfs/Frey_26.pdf
Disclosing that heterostructure devices (HEMT, TEGFET, MODFET, etc.) should be treatable as logical extensions since the dimensions of the regions are small enough that quantum effects should be considered (Section 6.2 on Page 346).